publications

publications by categories in reversed chronological order. generated by jekyll-scholar.

2024

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    Abstract2Appendix: Academic Reviews Enhance LLM Long-Context Capabilities
    S Li, K Kampa, R Lin, and 2 more authors
    arXiv preprint arXiv:2411.05232, 2024
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    Multi-modal preference alignment remedies degradation of visual instruction tuning on language models
    S Li, R Lin, and S Pei
    Proceedings of ACL, 2024
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    Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light source
    Z Liu, Y Lu, H Cao, and 7 more authors
    Micro and Nanostructures, 2024

2023

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    High-performance van der Waals antiferroelectric CuCrP2S6-based memristors
    Y Ma, Y Yan, L Luo, and 8 more authors
    Nature Communications, 2023
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    Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructures
    C Wang, F AlQatari, V Khandelwal, and 2 more authors
    Applied Surface Science, 2023
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    Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substrates
    X Tang, Y Lu, R Lin, and 7 more authors
    Applied Physics Letters, 2023

2022

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    Wide Bandgap Semiconductor Device Design via Machine Learning
    R Lin
    King Abdullah University of Science and Technology, 2022
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    A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithm
    R Lin, Z Liu, P Han, and 7 more authors
    Journal of Materials Chemistry C, 2022

2021

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    Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV Photodetectors
    X Tang, KH Li, Y Zhao, and 7 more authors
    ACS Applied Materials & Interfaces, 2021
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    Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LED
    Z Liu, Y Lu, Y Wang, and 3 more authors
    IEEE Photonics Journal, 2021
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    Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations
    X Tang, KH Li, CH Liao, and 6 more authors
    Journal of Materials Chemistry C, 2021
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    BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layer
    W Gu, Y Lu, R Lin, and 7 more authors
    Journal of Physics D: Applied Physics, 2021
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    Low resistance asymmetric III-nitride tunnel junctions designed by machine learning
    R Lin, P Han, Y Wang, and 5 more authors
    Nanomaterials, 2021
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    Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton Localization
    M Shan, Y Zhang, M Tian, and 7 more authors
    ACS Photonics, 2021
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    Correction: Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrations
    X Tang, KH Li, CH Liao, and 6 more authors
    Journal of Materials Chemistry C, 2021

2020

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    BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructures
    R Lin, X Liu, K Liu, and 3 more authors
    Journal of Physics D: Applied Physics, 2020