publications
publications by categories in reversed chronological order. generated by jekyll-scholar.
2024
- Abstract2Appendix: Academic Reviews Enhance LLM Long-Context CapabilitiesarXiv preprint arXiv:2411.05232, 2024
- Multi-modal preference alignment remedies degradation of visual instruction tuning on language modelsProceedings of ACL, 2024
- Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light sourceMicro and Nanostructures, 2024
2023
- High-performance van der Waals antiferroelectric CuCrP2S6-based memristorsNature Communications, 2023
- Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructuresApplied Surface Science, 2023
- Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substratesApplied Physics Letters, 2023
2022
- Wide Bandgap Semiconductor Device Design via Machine LearningKing Abdullah University of Science and Technology, 2022
- A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithmJournal of Materials Chemistry C, 2022
2021
- Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV PhotodetectorsACS Applied Materials & Interfaces, 2021
- Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LEDIEEE Photonics Journal, 2021
- Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrationsJournal of Materials Chemistry C, 2021
- BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layerJournal of Physics D: Applied Physics, 2021
- Low resistance asymmetric III-nitride tunnel junctions designed by machine learningNanomaterials, 2021
- Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton LocalizationACS Photonics, 2021
- Correction: Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrationsJournal of Materials Chemistry C, 2021
2020
- BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructuresJournal of Physics D: Applied Physics, 2020