publications
publications by categories in reversed chronological order. generated by jekyll-scholar.
2025
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Machine learning for 2D material-based devicesMaterials Science and Engineering: R: Reports, Sep 2025 -
Don’t train medical AI on patients’ data without their knowledgeNature, Aug 2025
2024
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Abstract2Appendix: Academic Reviews Enhance LLM Long-Context CapabilitiesarXiv preprint arXiv:2411.05232, Aug 2024 -
Multi-modal preference alignment remedies degradation of visual instruction tuning on language modelsProceedings of ACL, Aug 2024 -
Multi-wavelength and broadband AlGaN-based LED for versatile and artificial UV light sourceMicro and Nanostructures, Aug 2024
2023
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High-performance van der Waals antiferroelectric CuCrP2S6-based memristorsNature Communications, Aug 2023 -
Origin of interfacial charges of Al2O3/Si and Al2O3/GaN heterogeneous heterostructuresApplied Surface Science, Aug 2023 -
Flexible self-powered DUV photodetectors with high responsivity utilizing Ga2O3/NiO heterostructure on buffered Hastelloy substratesApplied Physics Letters, Aug 2023
2022
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Wide Bandgap Semiconductor Device Design via Machine LearningKing Abdullah University of Science and Technology, Aug 2022 -
A machine learning study on superlattice electron blocking layer design for AlGaN deep ultraviolet light-emitting diodes using the stacked XGBoost/LightGBM algorithmJournal of Materials Chemistry C, Aug 2022
2021
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Quasi-Epitaxial Growth of β-Ga2O3-Coated Wide Band Gap Semiconductor Tape for Flexible UV PhotodetectorsACS Applied Materials & Interfaces, Aug 2021 -
Polarization modulation at last quantum barrier for high efficiency AlGaN-based UV LEDIEEE Photonics Journal, Aug 2021 -
Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrationsJournal of Materials Chemistry C, Aug 2021 -
BAlN for III-nitride UV light-emitting diodes: undoped electron blocking layerJournal of Physics D: Applied Physics, Aug 2021 -
Low resistance asymmetric III-nitride tunnel junctions designed by machine learningNanomaterials, Aug 2021 -
Transverse Electric Lasing at a Record Short Wavelength 244.63 nm from GaN Quantum Wells with Weak Exciton LocalizationACS Photonics, Aug 2021 -
Correction: Epitaxial growth of β-Ga2O3 (-201) thin film on four-fold symmetry CeO2 (001) substrate for heterogeneous integrationsJournal of Materials Chemistry C, Aug 2021
2020
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BAlN alloy for enhanced two-dimensional electron gas characteristics of GaN/AlGaN heterostructuresJournal of Physics D: Applied Physics, Aug 2020